s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t n- ch an n el m osf et irl m l 0100 ( k r lm l0 1 0 0 ) f e a tu r e s v d s ( v ) = 1 0 0 v i d = 1 . 6 a ( v g s = 1 0 v ) r d s ( o n ) 2 2 0 m ( v g s = 1 0 v ) r d s ( o n ) 2 3 5 m ( v g s = 4 . 5 v ) a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 1 0 0 v g s 1 6 t a = 2 5 1 . 6 t a = 7 0 1 . 3 i d m 7 t a = 2 5 1 . 3 t a = 7 0 0 . 8 1 0 0 9 9 0 . 0 1 w / t j 1 5 0 t st g - 5 5 t o 1 5 0 l i n e a r d e r a t i n g f a c t o r v a p u l s e d d r a i n c u r r e n t p a r a m e t e r c o n t i n u o u s d r a i n c u r r e n t @ v g s = 1 0 v i d d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e p d w p o w e r d i s s i p a t i o n / w t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t ( n o t e . 1 ) r t h ja n o t e . 1 : s u r f a c e m o u n t e d o n 1 i n s q u a r e c u b o a r d s g 3 1 2 d 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 . gate 2 . source 3 . drain
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t n- ch an n el m osf et irl m l 0100 ( k r lm l0 1 0 0 ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 1 0 0 v v d s = 1 0 0 v , v g s = 0 v 2 0 v d s = 1 0 0 v , v g s = 0 v , t j = 1 2 5 2 5 0 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 1 6 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 50 a 1 2 . 5 v v g s = 4 . 5 v , i d = 1 . 3 a 1 9 0 2 3 5 v g s = 1 0 v , i d = 1 . 6 a 1 7 8 2 2 0 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 5 0 v , i d = 1 . 6 a 5 . 7 s i n p u t c a p a c i t a n c e c i ss 2 9 0 o u t p u t c a p a c i t a n c e c o ss 2 7 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 1 3 g a t e r e s i s t a n c e r g 1 . 3 t o t a l g a t e c h a r g e q g 2 . 5 g a t e s o u r c e c h a r g e q g s 0 . 5 g a t e d r a i n c h a r g e q g d 1 . 2 t u r n - o n d e l a y t i m e t d ( o n ) 2 . 2 t u r n - o n r i s e t i m e t r 2 . 1 t u r n - o f f d e l a y t i m e t d ( o f f ) 9 t u r n - o f f f a l l t i m e t f 3 . 6 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 2 0 3 0 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 1 3 2 0 n c m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s 1 . 1 p u l s e d s o u r c e c u r r e n t i s m ( n o t e . 2 ) 7 d i o d e f o r w a r d v o l t a g e v s d i s = 1 . 1 a , v g s = 0 v , t j = 2 5 ( n o t e . 1 ) 1 . 3 v a n s z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s a m v g s = 4 . 5 v , v d s = 5 0 v , i d = 1 a , r g e n = 6 . 8 r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( n o t e . 1 ) v r = 5 0 v , i f = 1 . 1 a , d i / d t = 1 0 0 a / s , t j = 2 5 ( n o t e . 1 ) v g s = 0 v , v d s = 2 5 v , f = 1 m h z v g s = 4 . 5 v , v d s = 5 0 v , i d = 1 . 6 a p f n c n o t e . 1 : p u l s e w i d t h 4 0 0 s ; d u t y c y c l e 2 % . n o t e . 2 : r e p e t i t i v e r a t i n g ; p u l s e w i d t h l i m i t e d b y m a x . j u n c t i o n t e m p e r a t u r e . m a r k i n g m a r k i n g 1 k * *
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t n- ch an n el m osf et irl m l 0100 ( k r lm l0 1 0 0 ) t y p i c a l ch a r a c te r i s i ti c s fig 3 . typical transfer characteristics fig 2 . typical output characteristics fig 1 . typical output characteristics fig 4. normalized on-resistance vs. temperature 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 v g s , g a t e - t o - s ou r ce v o l t age ( v ) 0 . 0 1 0 . 1 1 1 0 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25 c t j = 150 c v d s = 50 v 60 s p u l se w i d t h - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 10 0 12 0 14 0 16 0 t j , j un c t i on t e m pe r a t u r e ( c ) 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 1 . 6 a v g s = 10 v 0 . 1 1 1 0 10 0 v d s , d r a i n - t o - s ou r ce v o l t age ( v ) 0 . 0 1 0 . 1 1 1 0 10 0 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v g s t o p 10.0 v 4.50 v 3.50 v 3.30 v 3.25 v 2.50 v 2.35 v b o tt o m 2.25 v 60 s p u l se w i d t h t j = 25 c 2 . 25 v 0 . 1 1 1 0 10 0 v d s , d r a i n - t o - s ou r c e v o l t age ( v ) 0 . 1 1 1 0 10 0 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s p u l se w i d t h t j = 150 c 2 . 25 v v g s t o p 10 . 0 v 4 . 50 v 3 . 50 v 3 . 30 v 3 . 25 v 2 . 50 v 2 . 35 v b o tt o m 2 . 25 v fig 6 . typical gate charge vs. gate-to-source voltage fig 5 . typical capacitance vs. drain-to-source voltage 1 1 0 10 0 v d s , d r a i n - t o - s ou r ce v o l t age ( v ) 1 1 0 10 0 100 0 1000 0 c , c a p a c i t a n c e ( p f ) v g s = 0 v , f = 1 m h z c i ss = c g s + c g d , c d s s h o r t e d c rs s = c g d c o ss = c d s + c g d c os s c r s s c i s s 0 1 2 3 4 5 6 7 q g t o t a l g a t e c ha r ge ( n c ) 0 4 8 1 2 1 6 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v d s = 80 v v d s = 50 v v d s = 20 v i d = 1 . 6 a
s m d ty p e w w w . k e x i n . c o m . c n 4 m osf e t . n- ch an n el m osf et irl m l 0100 ( k r lm l0 1 0 0 ) t y p i c a l ch a r a c te r i s i ti c s fig 8. maximum safe operating area fig 7 . typical source-drain diode forward voltage 0 . 4 0 . 6 0 . 8 1 . 0 v s d , s o u r c e - t o - d r a i n v o l t ag e ( v ) 0 . 0 1 0 . 1 1 1 0 1 0 0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 2 5 c t j = 15 0 c v g s = 0 v 0 . 1 1 1 0 1 0 0 v d s , d r a i n - t o - s o u r c e v o l t ag e ( v ) 0 . 0 1 0 . 1 1 1 0 1 0 0 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 2 5 c t j = 15 0 c s i n g l e p u l s e 1 m s e c 1 0 m s e c o pe r a t i o n i n t h i s a r e a l i m i t e d b y r d s ( o n ) 10 0 s e c fig 9. maximum drain current vs. ambient temperature 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 t a , a m b i e n t t e m p e r a t u r e ( c ) 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 i d , d r a i n c u r r e n t ( a ) fig 11. typical effective transient thermal impedance, junction-to-ambient 1 e - 0 0 6 1 e - 0 0 5 0 . 00 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 t 1 , r e c t ang u l a r p u l s e d u r a t i o n ( s e c ) 0 . 0 1 0 . 1 1 1 0 1 0 0 10 0 0 t h e r m a l r e s p o n s e ( z t h j a ) 0 . 2 0 0 . 1 0 d = 0 . 5 0 0 . 0 2 0 . 0 1 0 . 0 5 si n g l e p u l s e ( t h e r m a l r es p o n s e ) n o t e s : 1 . d u t y f a c t o r d = t 1 / t 2 2 . p ea k t j = p d m x z t h j c + t c v ds 90% 10% v gs t d(on ) t r t d( of f ) t f fig 10b. switching time waveforms fig 10a . switching time test circuit 1 0.1 % + -
s m d ty p e w w w . k e x i n . c o m . c n 5 m os f e t n- ch an n el m osf et irl m l 0100 ( k r lm l0 1 0 0 ) t y p i c a l ch a r a c te r i s i ti c s f i g 13 . typical on-resistance vs. drain curr e n t f i g 12 . typical on-resistance vs. gate v o l t a g e 2 4 6 8 1 0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0 4 5 0 5 0 0 5 5 0 6 0 0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 1 . 6 a t j = 2 5 c t j = 1 2 5 c 0 2 4 6 8 i d , d r a i n c u r r e n t ( a ) 1 7 0 1 9 0 2 1 0 2 3 0 2 5 0 2 7 0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v g s = 1 0 v v g s = 4 . 5 v fig 1 4 . typical threshold voltage vs. junction temperature typical power vs. time - 7 5 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 t j , t e m p e r a t u r e ( c ) 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 2 5 u a i d = 25 0 u a 1 e - 0 0 5 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 t i m e ( s e c ) 0 2 0 4 0 6 0 8 0 1 0 0 p o w e r ( w ) fig 1 5 . fi g 16b . gate charge test circuit fi g 16a. basic gate charge waveform 1 k v c c d u t 0 l s d g 2 0 k v d s v g s i d v g s ( t h ) qg s 1 qg s 2 q g d q g o d r
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